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this is information on a product in full production. july 2013 docid024772 rev 2 1/19 STB6N60M2, std6n60m2 n-channel 600 v, 1.06 typ., 4.5 a mdmesh ii plus? low q g power mosfet in d 2 pak and dpak packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. 1 3 tab dpak d pak 2 1 3 tab am15572v1 , tab order codes v ds @ t jmax r ds(on) max i d STB6N60M2 650 v 1.2 4.5 a std6n60m2 table 1. device summary order codes marking package packaging STB6N60M2 6n60m2 d 2 pak tape and reel std6n60m2 dpak www.st.com
contents STB6N60M2, std6n60m2 2/19 docid024772 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024772 rev 2 3/19 STB6N60M2, std6n60m2 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 4.5 a i d drain current (continuous) at t c = 100 c 2.9 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 18 a p tot total dissipation at t c = 25 c 60 w dv/dt (2) 2. i sd 4.5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 t stg storage temperature -55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak dpak r thj-case thermal resistance junction-case max 2.08 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 30 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 86 mj
electrical characteristics STB6N60M2, std6n60m2 4/19 docid024772 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.25 a 1.06 1.2 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -232-pf c oss output capacitance - 14 - pf c rss reverse transfer capacitance -0.7-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 71 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - q g total gate charge v dd = 480 v, i d = 4.5 a, v gs = 10 v (see figure 16 ) -8-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 1.65 a, r g = 4.7 , v gs = 10 v (see figure 15 and figure 20 ) -9.5-ns t r rise time - 7.4 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 22.5 - ns
docid024772 rev 2 5/19 STB6N60M2, std6n60m2 electrical characteristics 19 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 18 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4.5 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 274 ns q rr reverse recovery charge - 1.47 nc i rrm reverse recovery current - 10.7 a t rr reverse recovery time i sd = 4.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 376 ns q rr reverse recovery charge - 1.96 nc i rrm reverse recovery current - 10.5 a
electrical characteristics STB6N60M2, std6n60m2 6/19 docid024772 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak i d 1 0.1 0.01 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms tj=150c tc=25c single pulse 10 10ms 100 am15885v1 figure 4. safe operating area for dpak figure 5. thermal impedance for dpak i d 1 0.1 0.01 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms tj=150c tc=25c single pulse 10 10ms 100 am15875v1 figure 6. output characteristics figure 7. transfer characteristics i d 3 2 1 0 0 10 v ds (v) (a) 5 4 v gs = 4 v v gs = 5 v v gs = 8, 9, 10 v 5 v gs = 6 v v gs = 7 v 6 8 15 20 7 am15876v1 i d 3 2 1 0 0 2 v gs (v) 4 (a) 4 6 v ds = 20 v 8 5 6 7 10 8 am15877v1
docid024772 rev 2 7/19 STB6N60M2, std6n60m2 electrical characteristics 19 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. normalized v ds vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =480v 8 12 i d =4.5v v ds 300 200 100 0 400 500 v ds (v) am15878v1 r ds(on) 1.060 1.040 1.020 0 3 i d (a) ( ) 1 1.080 1.100 2 4 v gs =10v 1.120 am15879v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15880v1 v ds -50 t j (c) (norm) -25 50 0 25 75 0.93 0.95 0.97 1.03 1.05 1.07 100 0.99 1.01 1.09 1.11 i =1 ma d am15881v1 v gs(th) 0.8 0.7 -50 t j (c) (norm) -25 0.9 50 0 25 75 100 i d =250 a 1.1 1.0 am15882v1 r ds(on) 0.9 0.7 0.5 -25 t j (c) -50 0 1.1 25 50 75 1.3 (norm) 100 1.5 1.7 1.9 2.1 2.3 i d =2.2 a am15883v1
electrical characteristics STB6N60M2, std6n60m2 8/19 docid024772 rev 2 figure 14. source-drain diode forward characteristics v sd 0 2 i sd (a) (v) 1 3 0 0.2 0.4 0.6 0.8 t j =-50c t j =150c t j =25c 4 1.2 1 1.4 am15884v1
docid024772 rev 2 9/19 STB6N60M2, std6n60m2 test circuits 19 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB6N60M2, std6n60m2 10/19 docid024772 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024772 rev 2 11/19 STB6N60M2, std6n60m2 package mechanical data 19 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB6N60M2, std6n60m2 12/19 docid024772 rev 2 figure 21. d2pak (to-263) drawing figure 22. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024772 rev 2 13/19 STB6N60M2, std6n60m2 package mechanical data 19 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STB6N60M2, std6n60m2 14/19 docid024772 rev 2 figure 23. dpak (to-252) drawing 0068772_k
docid024772 rev 2 15/19 STB6N60M2, std6n60m2 package mechanical data 19 figure 24. dpak footprint (b) b. all dimensions are in millimeters footprint_rev_k
packaging mechanical data STB6N60M2, std6n60m2 16/19 docid024772 rev 2 5 packaging mechanical data table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
docid024772 rev 2 17/19 STB6N60M2, std6n60m2 packaging mechanical data 19 figure 25. tape figure 26. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB6N60M2, std6n60m2 18/19 docid024772 rev 2 6 revision history table 12. document revision history date revision changes 11-jun-2013 1 first release. 09-jul-2013 2 ? minor text changes ? modified: r thj-case value for d 2 pak in table 3
docid024772 rev 2 19/19 STB6N60M2, std6n60m2 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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